MJE18008, MJF18008 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MJE18008, MJF18008	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJE18008G
Transistor Type: NPN
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 8A
Power Dissipation (Pd): 125W
Transition Frequency (fT): 13MHz
DC Current Gain (hFE@Ic,Vce): 14@1A,5V
Collector Cut-Off Current (Icbo): 100uA
Collector-Emitter Breakdown Voltage (Vceo): 450V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@2A,200mA
Package: TO-220F
Manufacturer: onsemi
Series: SWITCHMODE™
Packaging: Tube
Part Status: Obsolete
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5V
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Power - Max: 125W
Frequency - Transition: 13MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: MJE18
detail: Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB